CVD銅基單層氮化硼薄膜

簡(jiǎn)要描述：Single layer h-BN （Boron Nitride） monolayer thick film is grown onto 50 um thick copper foils. h-BN is an insulator with a direct band gap of 6 eV with strong ionic bonding between B-N atoms.

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更新時(shí)間：2026-04-09
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二維材料

其他二維材料二維材料粉末二維材料溶液碲化物晶體硒化物晶體硫化物晶體絕緣體鈣鈦礦異質(zhì)結(jié) MOFS材料二維材料薄膜黑磷六方氮化硼查看全部產(chǎn)品

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Single layer h-BN (Boron Nitride) monolayer thick film is grown onto 50 um thick copper foils. h-BN is an insulator with a direct band gap of 6 eV with strong ionic bonding between B-N atoms. Our h-BN CVD process has been adopted in order that defect density has been kept low (~1E10-1E11 cm-2) and single domain sizes have been increased to reduce 1D grain boudary defect concentrations. Monolayer h-BN sheets measure ~5cm x 5cm or ~2x2 inches in size.

Properties of h-BN